Doping site dependent thermoelectric properties of epitaxial strontium titanate thin films

Anas I. Abutaha, S. R. Sarath Kumar, Arash Mehdizadeh Dehkordi, TERRY M. TRITT, Husam N. Alshareef

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

We demonstrate that the thermoelectric properties of epitaxial strontium titanate (STO) thin films can be improved by additional B-site doping of A-site doped ABO3 type perovskite STO. The additional B-site doping of A-site doped STO results in increased electrical conductivity, but at the expense of Seebeck coefficient. However, doping on both sites of the STO lattice significantly reduces the lattice thermal conductivity of STO by adding more densely and strategically distributed phononic scattering centers that attack wider phonon spectra. The additional B-site doping limits the trade-off relationship between the electrical conductivity and total thermal conductivity of A-site doped STO, leading to an improvement in the room-temperature thermoelectric figure of merit, ZT. The 5% Pr3+ and 20% Nb5+ double-doped STO film exhibits the best ZT of 0.016 at room temperature. This journal is
Original languageEnglish (US)
Pages (from-to)9712-9719
Number of pages8
JournalJ. Mater. Chem. C
Volume2
Issue number45
DOIs
StatePublished - Oct 17 2014

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Chemistry

Fingerprint

Dive into the research topics of 'Doping site dependent thermoelectric properties of epitaxial strontium titanate thin films'. Together they form a unique fingerprint.

Cite this