Doping of nitrogen acceptors into ZnSe using a radical beam during MBE growth

K. Ohkawa*, T. Karasawa, T. Mitsuyu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

147 Scopus citations

Abstract

A new method of doping for ZnSe was attempted by using a neutral radical beam during the MBE growth. The radical beam dominantly consisted of N2 molecular radicals at A3σ+u state. The sticking coefficient of nitrogen was remarkably enhanced; thus this doping method was able to incorporate N into ZnSe by 1019 cm-3. The existence of shallow N acceptors was confirmed by photoluminescence measurements; recombination of free electrons and acceptor holes (FA) at room temperature and recombination of donor-acceptor pairs at low-temperature were observed. The FA emission was observed only for ZnSe layers with moderate doping level, which shows p-type conduction. The carrier concentration was the order of 1015 cm-3. The activation of N in ZnSe was less than 1%.

Original languageEnglish (US)
Pages (from-to)797-801
Number of pages5
JournalJournal of Crystal Growth
Volume111
Issue number1-4
DOIs
StatePublished - May 2 1991
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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