Doping Cu into ZnO nanostructures

G. Z. Xing, J. G. Tao, G. P. Li, Z. Zhang, L. M. Wong, S. J. Wang, C. H.A. Huan, Tao Wu*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

4 Scopus citations

Abstract

Controlled doping appropriate elements into semiconductor nanostructures is of vital importance to develop novel materials and functional devices. Herein, we present three methods to synthesize Cu-doped ZnO nanostructures using a simple vapor phase transport process and adopting CuCl2, CuO or Cu as doping precursors. The corresponding morphology, structure, and chemical composition were investigated using field emission scanning electron microscope, transmission electron microscope, X-ray diffraction and X-ray photoelectron spectroscopy. We show that these three methods produce nanostructures with different morphologies and doping levels. This work paves the way for investigating the physical properties of Cu-doped ZnO nanostructures and furthermore facilitates the synthesis of other transition-metal-doped nanomaterials.

Original languageEnglish (US)
Title of host publication2008 2nd IEEE International Nanoelectronics Conference, INEC 2008
Pages462-466
Number of pages5
DOIs
StatePublished - Oct 1 2008
Event2008 2nd IEEE International Nanoelectronics Conference, INEC 2008 - Shanghai, China
Duration: Mar 24 2008Mar 27 2008

Publication series

Name2008 2nd IEEE International Nanoelectronics Conference, INEC 2008

Other

Other2008 2nd IEEE International Nanoelectronics Conference, INEC 2008
CountryChina
CityShanghai
Period03/24/0803/27/08

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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