Doping and MBE growth of ZnSe for blue LEDs and LDs

Kazuhiro Ohkawa*, Ayumu Tsujimura, Shigeo Hayashi, Shigeo Yoshii, Tsuneo Mitsuyu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

12 Scopus citations

Abstract

Highly-conductive n- and p-type ZnSe layers have been successfully grown by MBE with Cl doping and nitrogen radical doping techniques, respectively. Carrier scattering mechanism and compensation in MBE-grown ZnSe layers have been studied by optical and electrical measurements. It was found that electron scattering at 77 K was dominated by neutral impurity scattering. The self-compensation effect has not been observed for both n- and p-type ZnSe layers.

Original languageEnglish (US)
Title of host publicationConference on Solid State Devices and Materials
PublisherPubl by Business Cent for Acad Soc Japan
Pages330-332
Number of pages3
StatePublished - 1992
Externally publishedYes
EventExtended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 - Tsukuba, Jpn
Duration: Aug 26 1992Aug 28 1992

Other

OtherExtended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92
CityTsukuba, Jpn
Period08/26/9208/28/92

ASJC Scopus subject areas

  • Engineering(all)

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