Doped silicene: Evidence of a wide stability range

Yingchun Cheng, Zhiyong Zhu, Udo Schwingenschlögl

Research output: Contribution to journalArticlepeer-review

52 Scopus citations

Abstract

The effects of doping on the lattice structure, electronic structure, phonon spectrum, and electron-phonon coupling of low-buckling silicene are studied by first-principles calculations. Although the lattice is found to be very sensitive to the carrier concentration, it is stable in a wide doping range. The frequencies of the E2g-Γ and A′-K Raman modes can be used to probe the carrier concentration. In addition, the phonon dispersion displays Kohn anomalies at the Γ and K points which are reduced by doping. This implies that the electron-phonon coupling cannot be neglected in field-effect transistor applications. Copyright © 2011 EPLA.
Original languageEnglish (US)
Pages (from-to)17005
JournalEPL (Europhysics Letters)
Volume95
Issue number1
DOIs
StatePublished - Jun 17 2011

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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