Domain-related origin of magnetic relaxation in compressively strained manganite thin films

S. R. Bakaul*, B. F. Miao, W. Lin, W. Hu, A. David, H. F. Ding, Tao Wu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

15 Scopus citations

Abstract

Magnetic relaxation is ubiquitous in magnetic materials, and elucidation of the underlying mechanisms is important for achieving reliable device operations. Here, we systematically investigate the magnetic relaxation in compressively strained La 0.7Sr 0.3MnO 3 thin films. Upon the removal of external magnetic field, the slow time-dependent increase of in-plane magnetization is correlated with the break-up of magnetic domains and the emergence of additional domain walls, whereas a reduction of magnetization for the initial short period dominates the magnetic relaxation at lower temperatures in thinner films. These relaxation effects underline the importance of domain dynamics in the properties of magnetic thin films.

Original languageEnglish (US)
Article number012408
JournalApplied Physics Letters
Volume101
Issue number1
DOIs
StatePublished - Jul 2 2012

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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