Direct writing of gratings in GaInAs/GaInAsP quantum wells using pulsed laser irradiation

B. S. Ooi*, E. L. Portnoi, C. J. McLean, A. McKee, C. C. Button, A. C. Bryce, R. M. De La Rue, J. H. Marsh

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

A new quantum well intermixing technique, which involves irradiating multiple quantum well material with high energy laser pulses and producing transient heating, has been developed. A Q-switched Nd:YAG laser with pulse length of approximately 7 ns, repetition rate of 10 Hz and pulse energy density approximately 5 mJ mm-2 is used to generate a localized increase in the density of point defects. After subsequent annealing in a rapid thermal processor bandgap shifts of over 100 nm were observed. The spatial resolution was investigated by masking the sample with a metal mask. Spatially resolved photoluminescence measurements showed that the resolution of the process was 25 μm or better, this measurement being limited by the resolution of the photoluminescence set up. Gratings, with a pitch of 2.5 μm, were wet-etched into the back of waveguide samples, and the samples were irradiated through the grating and annealed as before. Waveguide transmission spectra showed a dip in the transmitted intensity around a wavelength of 1.525 μm indicating that a grating had been formed.

Original languageEnglish (US)
Pages (from-to)252-255
Number of pages4
JournalConference Proceedings - International Conference on Indium Phosphide and Related Materials
StatePublished - 1996
Externally publishedYes

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy(all)

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