Direct observation of an ordered phase in (112̄0) plane InGaN alloy

Kazuhide Kusakabe*, Takashi Yamazaki, Koji Kuramochi, Tokuma Furuzuki, Iwao Hashimoto, Shizutoshi Ando, Kazuhiro Ohkawa

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

A polar-dependent phase with spontaneous atomic ordering is found in a nonpolar (112̄0) plane In0.08Ga0.92N film grown by metalorganic vapor-phase epitaxy. An atomic arrangement is a periodic sequence of group-III sublattices, such as In0.04Ga0.96N/In 0.12Ga0.88N, that is only observed in a nitrogen polar region through systematic transmission electron microscopy investigation. Cathodoluminescence (CL) in the nitrogen polar region, i.e., spontaneously ordered atomic structure of InGaN, reveals anomalous emission behavior, specifically an S-shape-like (increase-decrease) temperature dependence of CL peak energy. It is suggested that the spontaneous ordered atomic structure of InGaN plays the role of a localized center owing to band gap shrinkage, which has been reported in other III-V alloy systems.

Original languageEnglish (US)
Pages (from-to)8783-8786
Number of pages4
JournalJapanese Journal of Applied Physics
Volume47
Issue number12
DOIs
StatePublished - Dec 19 2008

Keywords

  • InGaN
  • MOVPE
  • Phase ordering
  • TEM

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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