Direct growth of high-power InGaN/GaN quantum-disks-in-nanowires red light-emitting diodes on polycrystalline molybdenum substrates

Chao Zhao, Tien Khee Ng, Nini Wei, Aditya Prabaswara, Mohd Sharizal Bin Alias, Bilal Janjua, Chao Shen, Giuseppe Bernardo Consiglio, Ahmed Y. Alyamani, Munir M. El-Desouki, Boon Ooi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The first high-power InGaN/GaN quantum-disks-in-nanowires red (λ=705 nm) light-emitting diodes on metal substrates was demonstrated. The low turn-on voltage and high power were achieved through the direct growth of high-quality nanowires on TiN/Ti/Mo stack.
Original languageEnglish (US)
Title of host publication2016 Conference on Lasers and Electro-Optics (CLEO)
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
StatePublished - Dec 19 2016

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