Dipole model explaining high-k/metal gate threshold voltage tuning

P. D. Kirsch, P. Sivasubramani, J. Huang, C. D. Young, C. S. Park, K. Freeman, Muhammad Mustafa Hussain, G. Bersuker, H. R. Harris, P. Majhi, P. Lysaght, H. H. Tseng, B. H. Lee, R. Jammy

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

An interface dipole model explaining threshold voltage (Vt) tuning in HfSiON gated n-channel field effect transistors (nFETs) is proposed. The magnitude of nFET Vt tuning tuning depends on rare earth (RE) type and diffusion in Si/SiOx/HfSiON/REOx cap layer/metal gated nFETs as follows: Sr < Er <Sc+Er < La < Sc < no cap layer. This V t ordering is very similar to the trends in dopant electronegativity (EN, dipole charge transfer) and ionic radius (r, dipole separation) expected for a interfacial dipole mechanism. The resulting Vt dependence on RE dopant allows distinction between a dipole model (dependent on EN and r) and an oxygen vacancy model (dependent on valence).

Original languageEnglish (US)
Title of host publicationECS Transactions - Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 5
Subtitle of host publicationNew Materials, Processes, and Equipment
Pages269-276
Number of pages8
Edition1
DOIs
StatePublished - Dec 1 2009
EventInternational Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment - 215th ECS Meeting - San Francisco, CA, United States
Duration: May 24 2009May 29 2009

Publication series

NameECS Transactions
Number1
Volume19
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherInternational Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment - 215th ECS Meeting
CountryUnited States
CitySan Francisco, CA
Period05/24/0905/29/09

ASJC Scopus subject areas

  • Engineering(all)

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