Dipole-induced Ohmic contacts between monolayer Janus MoSSe and bulk metals

Ning Zhao, Udo Schwingenschlögl

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

AbstractUtilizing a two-dimensional material in an electronic device as channel layer inevitably involves the formation of contacts with metallic electrodes. As these contacts can dramatically affect the behavior of the device, we study the electronic properties of monolayer Janus MoSSe in contact with different metallic electrodes by first-principles calculations, focusing on the differences in the characteristics of contacts with the two sides of MoSSe. In particular, we demonstrate that the Fermi level pinning is different for the two sides of MoSSe, with the magnitude resembling that of MoS2 or MoSe2, while both sides can form Ohmic contacts with common electrode materials without any further adaptation, which is an outstanding advantage over MoS2 and MoSe2.
Original languageEnglish (US)
Journalnpj 2D Materials and Applications
Volume5
Issue number1
DOIs
StatePublished - Aug 6 2021

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