Dilute-As GaNAs semiconductor for visible emitters

Chee Keong Tan*, Jing Zhang, Xiao Hang Li, Guangyu Liu, Nelson Tansu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

First-principle analysis of the band structure for dilute-As GaN 1-xAsx semiconductor was carried out, and the finding showed the direct bandgap properties of this alloy covering the entire visible spectral regime applicable for new visible emitters.

Original languageEnglish (US)
Title of host publication2012 IEEE Photonics Conference, IPC 2012
Pages695-696
Number of pages2
DOIs
StatePublished - 2012
Externally publishedYes
Event25th IEEE Photonics Conference, IPC 2012 - Burlingame, CA, United States
Duration: Sep 23 2012Sep 27 2012

Other

Other25th IEEE Photonics Conference, IPC 2012
CountryUnited States
CityBurlingame, CA
Period09/23/1209/27/12

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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