Dielectric properties of PMMA-SiO2 hybrid films

M. D. Morales-Acosta, Manuel Angel Quevedo Quevedo-López, Husam N. Alshareef, Bruce E. Gnade, Rafael Ramírez-Bon

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Scopus citations

Abstract

Organic-inorganic hybrid films were synthesized by a modified sol-gel process. PMMASiO2 films were prepared using methylmethacrylate (MMA), tetraethil-orthosilicate (TEOS) as silicon dioxide source, and 3-trimetoxi-silil-propil-methacrylate (TMSPM) as coupling agent. FTIR measurements were performed on the hybrid films to confirm the presence of PMMA-SiO2 bonding. In addition, metal-insulator-metal (MIM) devices were fabricated to study the dielectric constant of the films as function of frequency (1 KHz to 1 MHz). Electrical results show a weak trend of the dielectric constant of the hybrid films with MMA molar ratio. More importantly, the PMMA-SiO2 hybrid films showed a higher dielectric constant than SiO2 and PMMA layers, which is likely due to the presence of additional C-O-C bond. © (2010) Trans Tech Publications.
Original languageEnglish (US)
Title of host publicationMaterials Science Forum
PublisherTrans Tech Publications
Pages25-28
Number of pages4
ISBN (Print)087849281X; 9780878492817
DOIs
StatePublished - Mar 2010

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