Diamond synthesis on silicon nitride by the hot filament chemical vapor deposition technique

Riccardo Polini*, Giorgio Mattei, Alessandra Marucci, Enrico Traversa

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

Diamond filins have been deposited by hot filament chemical vapor deposition on hot-pressed silicon nitride substrates using a mixture of hydrogen and methane with a CH4/H2 volume ratio fixed to 0.5%. Scratching with diamond paste of the as-received substrates was necessary to obtain high nucleation densities (108-109 cm-2) in the 750-1000°C deposition temperature range, while, on scratched substrates, the nucleation density decreased at 1050°C. The diamond deposition rate has its maximum at around 850-900°C. The film texture was {111}〈100〉 at the low deposition temperatures, while became {111} {100}〈110〉 at temperatures higher than 750°C. A careful analysis of the Raman spectra allowed us to identify the best deposition conditions for the growth of high quality diamond. Silicon nitride as a substrate for diamond CVD is better than cemented tungsten carbide due to the lower level of residual stress and to the higher phase purity of the coating.

Original languageEnglish (US)
Pages (from-to)1167-1171
Number of pages5
JournalNippon Seramikkusu Kyokai Gakujutsu Ronbunshi/Journal of the Ceramic Society of Japan
Volume106
Issue number12
StatePublished - Dec 1998
Externally publishedYes

Keywords

  • Chemical vapor deposition
  • Diamond
  • EDS
  • Film growth
  • Heterogeneous nucleation
  • Roman spectroscopy
  • SEM
  • Silicon nitride

ASJC Scopus subject areas

  • Ceramics and Composites
  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

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