Device properties of homo- and heteroepitaxial ZnSe-based laser diodes

Helmut Wenisch*, Martin Behringer, Michael Fehrer, Matthias Klude, Andreas Isemann, Kazuhiro Ohkawa, Detlef Hommel

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

15 Scopus citations

Abstract

The characteristics of ZnSe-based laser diodes grown on GaAs and ZnSe substrates are discussed. There is no significant difference observed in the dynamic behavior and in the operating voltages between the two cases. The degradation mechanism is similar with the developing of dark line defects and a 1/t-like decrease in light intensity at constant current for t → ∞. The width of the dark line defects is in homoepitaxy almost constant in time, although their number is higher. This difference is also reflected in the lifetimes of our devices during lasing, which is in heteroepitaxy three minutes and about one second in homoepitaxy, for both in cw operation at room temperature.

Original languageEnglish (US)
Pages (from-to)2590-2597
Number of pages8
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume38
Issue number4 B
StatePublished - Dec 1 1999

Keywords

  • Dark line defects
  • Dark spot defects
  • Device characteristics
  • Heteroepitaxy
  • Homoepitaxy
  • Laser diodes
  • Lifetime
  • Light emitting diodes
  • ZnSe

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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