Device Process and Circuit Application Interaction for Harsh Electronics: Hf-In-Zn-O Thin Film Transistors as an Example

Chih-Hsiang Ho, Dung-Sheng Tsai, Chao Lu, Soo Youn Kim, Selin Mungan, Shih-Guo Yang, Yuanzhi Zhang, Jr-Hau He

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

The effects of Hf content on the radiation hardness of Hf-In-Zn-O thin-film transistors (HIZO TFTs) and HIZO TFTbased circuits are systemically examined. The evaluated circuits, including current-starved ring oscillator, energy harvesting and RF circuits are essential for space electronic systems. It is shown that HIZO TFTs with low Hf concentration have better initial performance while TFTs with high Hf concentration are more stable against radiation. On the other hand, for circuit application, the stable HIZO TFTs are not necessarily preferred for all circuits. The work demonstrates that understanding the device-circuit interactions is necessary for device optimization and circuit reliability improvements for harsh electronic systems.
Original languageEnglish (US)
Pages (from-to)1039-1042
Number of pages4
JournalIEEE Electron Device Letters
Volume38
Issue number8
DOIs
StatePublished - Jun 27 2017

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