Device characteristics of InGaN quantum well light-emitting diodes with AlInN thin barrier insertion

Guangyu Liu*, Jing Zhang, Hongping Zhao, Nelson Tansu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The MOCVD growths and device characteristics of 500-nm emitting InGaN quantum well (QW) light-emitting diodes (LEDs) with the insertion of thin (~1 nm) AlInN barrier layers were investigated for efficiency droop suppression. Preliminary device characteristics of InGaN QW LEDs with thin AlInN barrier layers were also presented.

Original languageEnglish (US)
Title of host publicationGallium Nitride Materials and Devices VII
Volume8262
DOIs
StatePublished - 2012
Externally publishedYes
EventGallium Nitride Materials and Devices VII - San Francisco, CA, United States
Duration: Jan 23 2012Jan 26 2012

Other

OtherGallium Nitride Materials and Devices VII
CountryUnited States
CitySan Francisco, CA
Period01/23/1201/26/12

Keywords

  • Carrier leakage
  • Efficiency droop
  • III-Nitride
  • InGaN QWs
  • Light-emitting diodes

ASJC Scopus subject areas

  • Applied Mathematics
  • Computer Science Applications
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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