Device and reliability improvement of HfSiON+LaOx/Metal gate stacks for 22nm node application

J. Huang*, P. D. Kirsch, D. Heh, C. Y. Kang, G. Bersuker, Muhammad Mustafa Hussain, P. Majhi, P. Sivasubramani, D. C. Gilmer, N. Goel, M. A. Quevedo-Lopez, C. Young, C. S. Park, C. Park, P. Y. Hung, J. Price, H. R. Harris, B. H. Lee, H. H. Tseng, R. Jammy

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

12 Scopus citations

Abstract

For the first time, we illustrate the importance of process sequence for LaOx capped HfSiON/metal gate on performance, variability, scaling, interface quality and reliability. La diffusion to the high-k/low-k interface controls Vt, as well as strongly affects mobility, Nit and BTI. La diffusion is limited to the Si surface by employing SiON interface layer (IL) mitigating the issues of La-induced mobility degradation and PBTI. Improved Vt tunability, reliability and performance are achieved with optimized process sequence, high-k thickness control, LaOx deposition and SiON (not SiO2) IL. Tinv=1.15nm and Vt,lin=0.31V was obtained while achieving the following attributes: mobility∼70%, N it <5×1010 cm-2, δV t<30mV within wafer, BTI δVt <40mV at 125o°C. By optimizing these gate stack factors, we have developed and demonstrated structures for 22nm node LOP application. P. D. Kirsch.

Original languageEnglish (US)
Title of host publication2008 IEEE International Electron Devices Meeting, IEDM 2008
DOIs
StatePublished - Dec 1 2008
Event2008 IEEE International Electron Devices Meeting, IEDM 2008 - San Francisco, CA, United States
Duration: Dec 15 2008Dec 17 2008

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Other

Other2008 IEEE International Electron Devices Meeting, IEDM 2008
CountryUnited States
CitySan Francisco, CA
Period12/15/0812/17/08

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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