Development of slurry concentration adjustable tungsten chemical mechanical planarization process

X. B. Wang, J. B. Tan, P. S. Tan, Charles Lin, H. J. Zhao

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

Understanding the interaction of slurry component and concentration with polishing condition is necessary for developing a tightly controlled chemical mechanical planarization (CMP) process. This paper investigates the impacts of flowrate and concentration variation of tungsten CMP slurry. The slurry concentration adjustable tungsten CMP process is described. Finally, physical characterization and electrical results are presented. We demonstrate that the new process yields a significant improvement on the oxide erosion and a remarkable reduction in the cost of consumables.

Original languageEnglish (US)
Title of host publication2000 IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop
Subtitle of host publication"Advancing the Science of Semiconductor Manufacturing Excellence", ASMC 2000 Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages422-424
Number of pages3
Volume2000-January
ISBN (Electronic)0780359216
DOIs
StatePublished - 2000
Externally publishedYes
Event11th IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop, ASMC 2000 - Boston, United States
Duration: Sep 12 2000Sep 14 2000

Other

Other11th IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop, ASMC 2000
CountryUnited States
CityBoston
Period09/12/0009/14/00

Keywords

  • Chemical industry
  • Chemical technology
  • Costs
  • Manufacturing processes
  • Planarization
  • Plugs
  • Pulp manufacturing
  • Semiconductor device manufacture
  • Slurries
  • Tungsten

ASJC Scopus subject areas

  • Engineering(all)

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