TY - GEN
T1 - Development of SiC/MgO distributed bragg reflector using RF magnetron sputtering technique
AU - Khairul Anuar, M. S.
AU - Soetedjo, Hariyadi
AU - Bin Alias, Mohd Sharizal
AU - Sufian, S. M.
AU - Goh Boon, T.
AU - Richard, R.
AU - Saadah, A. R.
AU - Mohamed Razman, Y.
AU - Abdul Fatah, A. M.
PY - 2006/12/1
Y1 - 2006/12/1
N2 - A Bragg mirror structure is an essential part for vertical cavity surface emission laser (VCSEL) applications. High optical reflectance at required stopband width is one of major concern by means of application requirements. For this purpose, Bragg mirrors consisting of SiC/MgO multilayers have been developed using an RF magnetron sputtering technique at room temperature. These structures have been characterized using various measurement techniques like ellipsometry, reflectance spectroscopy, Fourier transform infrared (FTIR) spectroscopy, scanning electron microscopy (SEM) and X-ray diffraction (XRD) technique. From these measurements, it was confirmed that mirror materials were deposited on the substrates. For application requirement, the DBR mirror structure fabricated using only a seven period SiC/MgO multilayered structure produced the expected stop-band at 850 nm wavelength with high reflectivity of 95%.
AB - A Bragg mirror structure is an essential part for vertical cavity surface emission laser (VCSEL) applications. High optical reflectance at required stopband width is one of major concern by means of application requirements. For this purpose, Bragg mirrors consisting of SiC/MgO multilayers have been developed using an RF magnetron sputtering technique at room temperature. These structures have been characterized using various measurement techniques like ellipsometry, reflectance spectroscopy, Fourier transform infrared (FTIR) spectroscopy, scanning electron microscopy (SEM) and X-ray diffraction (XRD) technique. From these measurements, it was confirmed that mirror materials were deposited on the substrates. For application requirement, the DBR mirror structure fabricated using only a seven period SiC/MgO multilayered structure produced the expected stop-band at 850 nm wavelength with high reflectivity of 95%.
UR - http://www.scopus.com/inward/record.url?scp=35148886820&partnerID=8YFLogxK
U2 - 10.1109/SMELEC.2006.381085
DO - 10.1109/SMELEC.2006.381085
M3 - Conference contribution
AN - SCOPUS:35148886820
SN - 0780397312
SN - 9780780397316
T3 - IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
SP - 378
EP - 381
BT - ICSE 2006
T2 - 2006 IEEE International Conference on Semiconductor Electronics, ICSE 2006
Y2 - 29 November 2006 through 1 December 2006
ER -