Development of Ohmic nanocontacts via surface modification for nanowire-based electronic and optoelectronic devices: ZnO nanowires as an example

Jr-Hau He*, Jr Jian Ke, Pei Hsin Chang, Kun Tong Tsai, P. C. Yang, I. Min Chan

*Corresponding author for this work

Research output: Contribution to journalReview articlepeer-review

28 Scopus citations

Abstract

We demonstrated a nanocontacting scheme using a focus ion beam (FIB) system without further heat treatment for ZnO nanowires. This scheme includes Ga ion surface modification and direct-write Pt deposition induced by Ga ion, leading to an Ohmic nanocontact with a specific contact resistance as low as 2.5 × 10 -6 Ω cm 2. Temperature-dependent measurements show that the transport of the FIB-Pt contact on the ZnO nanowire with local surface modification is governed by field emission tunneling. Taking advantage of area-selected and room-temperature processes, Ga ion surface modification and direct-write Pt deposition using a FIB system demonstrates a feasible Ohmic scheme.

Original languageEnglish (US)
Pages (from-to)3399-3404
Number of pages6
JournalNanoscale
Volume4
Issue number11
DOIs
StatePublished - Jun 7 2012

ASJC Scopus subject areas

  • Materials Science(all)

Fingerprint Dive into the research topics of 'Development of Ohmic nanocontacts via surface modification for nanowire-based electronic and optoelectronic devices: ZnO nanowires as an example'. Together they form a unique fingerprint.

Cite this