Development of a fast and high resolution e-beam process for the fabrication of X-ray masks with CD of 0.15 μm

I. Raptis*, M. Gentili, Enzo Di Fabrizio, R. Maggiora, M. Baciocchi, L. Grella, L. Mastrogiacomo

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

In this paper it is presented a study on the process optimization for an e-beam sensitive commercial chemically amplified negative resist, the Shipley SAL 601-ER 7, used for fabrication of gold X-ray masks with CD down to 0.15 μm and complexity equivalent to that of 1 Gbit DRAM. The study includes the effect of pre-baking and post-baking thermal processes on resolution, exposure latitude and resist contrast. It is demonstrated that by using 105 °C temperature for pre- and post-exposure baking, 0.15 μm lines spaced of 0.15 μm can be achieved with an aspect ratio exceeding 4. Resist process is also successfully exploited for fabrication of a gold additive x-ray mask.

Original languageEnglish (US)
Pages (from-to)417-420
Number of pages4
JournalMicroelectronic Engineering
Volume27
Issue number1-4
DOIs
StatePublished - Jan 1 1995

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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