In this paper it is presented a study on the process optimization for an e-beam sensitive commercial chemically amplified negative resist, the Shipley SAL 601-ER 7, used for fabrication of gold X-ray masks with CD down to 0.15 μm and complexity equivalent to that of 1 Gbit DRAM. The study includes the effect of pre-baking and post-baking thermal processes on resolution, exposure latitude and resist contrast. It is demonstrated that by using 105 °C temperature for pre- and post-exposure baking, 0.15 μm lines spaced of 0.15 μm can be achieved with an aspect ratio exceeding 4. Resist process is also successfully exploited for fabrication of a gold additive x-ray mask.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering