Determination of nitrogen composition in GaNxAs1-x epilayer on GaAs

W. J. Fan*, S. F. Yoon, W. K. Cheah, W. K. Loke, Tien Khee Ng, S. Z. Wang, R. Liu, A. Wee

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

25 Scopus citations

Abstract

High-resolution X-ray diffraction (HRXRD) and secondary-ion mass spectroscopy (SIMS) were used to measure the N compositions of a series of as-grown GaNAs samples grown by solid-source molecular-beam epitaxy. We found that for the coherent samples, N compositions measured by the two methods agree well at lower N compositions (x<3%), deviate at larger N compositions (x>3%). The HRXRD measurement by using Vegard's law to extract the lattice constant of GaNAs underestimates N composition at larger N compositions. We found that the underestimation is 8.1% at the xSIMS=3.7%. Partially strain relaxed samples were also studied by using (115) XRD mapping. The strain relaxation may cause N composition underestimated by XRD.

Original languageEnglish (US)
Pages (from-to)470-474
Number of pages5
JournalJournal of Crystal Growth
Volume268
Issue number3-4 SPEC. ISS.
DOIs
StatePublished - Aug 1 2004
EventICMAT 2003, Symposium H, Compound Semiconductors in Electronic - Singapore, Singapore
Duration: Dec 7 2003Dec 12 2004

Keywords

  • A1. High resolution X-ray diffraction
  • A1. Secondary-ion mass spectroscopy
  • A3. Molecular beam epitaxy
  • B1. GaAsN

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Determination of nitrogen composition in GaN<sub>x</sub>As<sub>1-x</sub> epilayer on GaAs'. Together they form a unique fingerprint.

Cite this