Because of relatively low electron mobility of Ga2O3, it is important to identify proper current spreading materials. Fluorine-doped SnO2 (FTO) offers superior properties to those of indium tin oxide (ITO) including higher thermal stability, larger bandgap, and lower cost. However, the Ga2O3/FTO heterojunction including the important band offset and the I-V characteristics have not been reported. In this work, we have grown the Ga2O3/FTO heterojunction and performed X-ray photoelectron spectroscopy (XPS) measurement. The conduction and valence band offsets were determined to be 0.11±0.10 and 0.42±0.10 eV, indicating a minor barrier for electron transport and a type-I heterojunction. The subsequent I-V measurement of the Ga2O3/FTO heterojunction exhibited ohmic behavior. The results of this work manifests excellent candidacy of FTO for current spreading layers of Ga2O3 devices for high temperature and UV applications.