Detailed carrier recombination in lateral composition modulation structure

Kwangwook Park, Sooraj Ravindran, Seokjin Kang, Jung-Wook Min, Hyeong-Yong Hwang, Young-Dahl Jho, Yong-Ryun Jo, Bong-Joong Kim, Jongmin Kim, Yong-Tak Lee

Research output: Contribution to journalArticlepeer-review

Abstract

Carrier recombination in lateral composition modulation (LCM) GaInP was probed in detail using time-resolved photoluminescence (TR-PL) and transmission electron microscopy (TEM). Upon SiO2 passivation, the time-transient decay of the PL peak was slower, and carrier lifetime was significantly enhanced from 25 to 230 ps for passivated LCM GaInP in comparison with that of bulk GaInP. This is due to the suppressed surface recombination of the irregular and wavy surface of LCM GaInP observed by TEM. Temperature-dependent TR-PL also showed a large decrease in carrier lifetime with an increase in temperature, indicating the dominance of Shockley–Read–Hall recombination due to the nonperiodicity of the LCM structure.
Original languageEnglish (US)
Pages (from-to)095801
JournalApplied Physics Express
Volume11
Issue number9
DOIs
StatePublished - Aug 3 2018

Fingerprint

Dive into the research topics of 'Detailed carrier recombination in lateral composition modulation structure'. Together they form a unique fingerprint.

Cite this