Design optimization of GaInNAs quantum wells for long wavelength VCSEL

Mohd Sharizal Alias, Mohd Fauzi Maulud, Mitani Sufian, Sahbuddin Shaari, Nor Azlian Abd Manaf

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

Analysis of material composition effect and material gain are performed to investigate GaInNAs quantum wells performance for application in long wavelength Vertical-Cavity Surface-Emitting Laser (VCSEL) operating at 1310 nm wavelength. The optimized GaInNAs active region is then incorporated into double intracavity device structure for VCSEL analysis. The long wavelength GaInNAs VCSEL exhibits sub-miliampere operating current and single-mode emission at 1310 nm wavelength.

Original languageEnglish (US)
Title of host publicationICSE 2008 Proceedings - 2008 IEEE International Conference on Semiconductor Electronics
Pages311-315
Number of pages5
DOIs
StatePublished - 2008
Externally publishedYes
Event2008 IEEE International Conference on Semiconductor Electronics, ICSE 2008 - Johor Bahru, Johor, Malaysia
Duration: Nov 25 2008Nov 27 2008

Other

Other2008 IEEE International Conference on Semiconductor Electronics, ICSE 2008
CountryMalaysia
CityJohor Bahru, Johor
Period11/25/0811/27/08

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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