Design and optimization of distributed bragg reflector for 1310nm vertical cavity surface emitting lasers

Nor Azlian Abdul Manaf, Mohd Sharizal Alias, Sufian Mousa Mithani, Mohd Fauzi Maulud, Mohamed Razman Yahya, Abdul Fatah Awang Mat

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Optimization of GaAs/Al(x)Ga(1-x)As DBR mirror is performed for 1310 nm VCSEL application. The Al compositions and DBR periods are varied. GaAs/AlAs composition and DBR with 35 period shows the highest reflectivity which is 99.976% and 99.963%. The maximum reflectivity of full VCSEL structure is 99.957% with existence of resonant cavity of 0.141% depth at 1301.9 nm wavelength.

Original languageEnglish (US)
Title of host publicationICSE 2008 Proceedings - 2008 IEEE International Conference on Semiconductor Electronics
Pages254-258
Number of pages5
DOIs
StatePublished - 2008
Externally publishedYes
Event2008 IEEE International Conference on Semiconductor Electronics, ICSE 2008 - Johor Bahru, Johor, Malaysia
Duration: Nov 25 2008Nov 27 2008

Other

Other2008 IEEE International Conference on Semiconductor Electronics, ICSE 2008
CountryMalaysia
CityJohor Bahru, Johor
Period11/25/0811/27/08

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Fingerprint Dive into the research topics of 'Design and optimization of distributed bragg reflector for 1310nm vertical cavity surface emitting lasers'. Together they form a unique fingerprint.

Cite this