Design and fabrication of long-wavelength GaInNAs quantum well edge-emitting lasers

M. S. Alias*, F. Maskuriy, F. Faiz, S. M. Mitani

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The paper presented comprehensive theoretical design study and experimental fabrication of long wavelength GaInNAs edge-emitting laser diode. The theoretical results reveals that optimal GaInNAs active region and device structure are acquired, where high material gain near 1.3 μm and precise optical mode confinement are obtained. Room temperature lasing emission around 1.27 μm with low threshold current and threshold current densities are achieved in broad area GaInNAs laser diode grown by molecular beam epitaxy. The theoretical results of photoluminescence spectrum and light-current-voltage characteristic shows a very good agreement with the experimental results.

Original languageEnglish (US)
Title of host publicationISCAIE 2012 - 2012 IEEE Symposium on Computer Applications and Industrial Electronics
Pages39-42
Number of pages4
DOIs
StatePublished - 2012
Externally publishedYes
Event2012 IEEE Symposium on Computer Applications and Industrial Electronics, ISCAIE 2012 - Kota Kinabalu, Malaysia
Duration: Dec 3 2012Dec 4 2012

Other

Other2012 IEEE Symposium on Computer Applications and Industrial Electronics, ISCAIE 2012
CountryMalaysia
CityKota Kinabalu
Period12/3/1212/4/12

ASJC Scopus subject areas

  • Computer Science Applications
  • Electrical and Electronic Engineering

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