Design and characteristics of staggered InGaN quantum-well light-emitting diodes in the green spectral regime

H. P. Zhao, Guangyu Liu, Xiaohang Li, R. A. Arif, G. S. Huang, J. D. Poplawsky, S. Tafon Penn, V. Dierolf, N. Tansu

Research output: Contribution to journalArticlepeer-review

98 Scopus citations

Abstract

Staggered InGaN quantum wells (QWs) are investigated both numerically and experimentally as improved active region for light-emitting diodes (LEDs) emitting at 520-525nm. Based on a self-consistent six-band k·p method, band structures of both two-layer staggered In x Ga 1-x N/ In y Ga 1-y N QW and three-layer staggered In y Ga 1-y N/In x Ga 1-x N/In y Ga 1-y N QW structures are investigated as active region to enhance the spontaneous emission radiative recombination rate (R sp ) for LEDs emitting at 520-525nm. Numerical analysis shows significant enhancement of R sp for both two-layer and three-layer staggered InGaN QWs as compared to that of the conventional In z Ga 1-z N QW. Significant reduction of the radiative carrier lifetime contributes to the enhancement of the radiative efficiency for both two-layer and three-layer staggered InGaN QW LEDs emitting at 520-525nm. Three-layer staggered InGaN QW LEDs emitting at 520-525nm was grown by metal-organic chemical vapour deposition (MOCVD) by employing gradederature profile. Power density-dependent cathodoluminescence (CL) measurements show the enhancement of peak luminescence by up to 3 times and integrated luminescence by 1.8-2.8 times for the three-layer staggered InGaN QW LED. Electroluminescence (EL) output power of the staggered InGaN QW LED exhibits 2.0-3.5 times enhancement as compared to that of the conventional InGaN QW LED. The experimental results show the good agreement with theory.

Original languageEnglish (US)
Pages (from-to)283-295
Number of pages13
JournalIET Optoelectronics
Volume3
Issue number6
DOIs
StatePublished - Dec 23 2009

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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