Depth Profiling of La2O3 ∕ HfO2 Stacked Dielectrics for Nanoelectronic Device Applications

Husam N. Alshareef, S. Mure, P. Majhi, M. A. Quevedo-Lopez

Research output: Contribution to journalArticlepeer-review

Abstract

Nanoscale La2O3 /HfO2 dielectric stacks have been studied using high resolution Rutherford backscattering spectrometry. The measured distance of the tail-end of the La signal from the dielectric/Si interface suggests that the origin of the threshold voltage shifts and the carrier mobility degradation may not be the same. Up to 20% drop in mobility and 500 mV shift in threshold voltage was observed as the La signal reached the Si substrate. Possible reasons for these changes are proposed, aided by depth profiling and bonding analysis. © 2011 The Electrochemical Society.
Original languageEnglish (US)
Pages (from-to)H139
JournalElectrochemical and Solid-State Letters
Volume14
Issue number3
DOIs
StatePublished - Jan 3 2011

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01

ASJC Scopus subject areas

  • Materials Science(all)
  • Chemical Engineering(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

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