Monolayers of dendritic polymers were prepared by covalent attachment to a silicon wafer surface. Field enhanced oxidation of the monolayers was performed on a silicon surface using scanning probe lithography (SPL) to create features with dimensions below 60 nm. The dendrimer films were found to be resistant to a wet HF etch, thus, allowed to produce a positive-tone image as the patterned oxide itself relief features are etched away.
|Original language||English (US)|
|Number of pages||5|
|State||Published - Jan 1 1999|
ASJC Scopus subject areas
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering