Demonstration of transverse-magnetic deep-ultraviolet stimulated emission from AlGaN multiple-quantum-well lasers grown on a sapphire substrate

Xiaohang Li*, Tsung Ting Kao, Md Mahbub Satter, Yong O. Wei, Shuo Wang, Hongen Xie, Shyh Chiang Shen, P. Douglas Yoder, Alec M. Fischer, Fernando A. Ponce, Theeradetch Detchprohm, Russell D. Dupuis

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

46 Scopus citations

Abstract

We demonstrate transverse-magnetic (TM) dominant deep-ultraviolet (DUV) stimulated emission from photo-pumped AlGaN multiple-quantum-well lasers grown pseudomorphically on an AlN/sapphire template by means of photoluminescence at room temperature. The TM-dominant stimulated emission was observed at wavelengths of 239, 242, and 243 nm with low thresholds of 280, 250, and 290 kW/cm2, respectively. In particular, the lasing wavelength of 239 nm is shorter compared to other reports for AlGaN lasers grown on foreign substrates including sapphire and SiC. The peak wavelength difference between the transverse-electric (TE)-polarized emission and TM-polarized emission was approximately zero for the lasers in this study, indicating the crossover of crystal-field split-off hole and heavy-hole valence bands. The rapid variation of polarization between TE- and TM-dominance versus the change in lasing wavelength from 243 to 249 nm can be attributed to a dramatic change in the TE-to-TM gain coefficient ratio for the sapphire-based DUV lasers in the vicinity of TE-TM switch.

Original languageEnglish (US)
Article number041115
JournalApplied Physics Letters
Volume106
Issue number4
DOIs
StatePublished - Jan 26 2015

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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