Due to transistor leakage, CMOS circuits have a well-defined lower limit on their achievable energy efficiency . Once this limit is reached, power-constrained applications will face a cap on their maximum throughput independent of their level of parallelism. Avoiding this roadblock requires an alternate switching device with steeper sub-threshold slope-i.e., lower V DD/Ion for the same Ion/Ioff . One promising class of such devices with nearly ideal Ion/I off characteristics are electro-statically actuated micro-electro-mechanical (MEM) switches . Although mechanical movement makes MEM circuit delay significantly larger than that of CMOS, we have recently shown that with optimized circuit topologies MEM switches may potentially enable ∼10x lower energy over CMOS at up to ∼100MHz frequencies .