Demonstration of integrated micro-electro-mechanical switch circuits for VLSI applications

Fred Chen*, Matthew Spencer, Rhesa Nathanael, Chengcheng Wang, Hossein Fariborzi, Abhinav Gupta, Hei Kam, Vincent Pott, Jaeseok Jeon, Tsu Jae King Liu, Dejan Markovic, Vladimir Stojanovic, Elad Alon

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

57 Scopus citations

Abstract

Due to transistor leakage, CMOS circuits have a well-defined lower limit on their achievable energy efficiency [1]. Once this limit is reached, power-constrained applications will face a cap on their maximum throughput independent of their level of parallelism. Avoiding this roadblock requires an alternate switching device with steeper sub-threshold slope-i.e., lower V DD/Ion for the same Ion/Ioff [2]. One promising class of such devices with nearly ideal Ion/I off characteristics are electro-statically actuated micro-electro-mechanical (MEM) switches [6]. Although mechanical movement makes MEM circuit delay significantly larger than that of CMOS, we have recently shown that with optimized circuit topologies MEM switches may potentially enable ∼10x lower energy over CMOS at up to ∼100MHz frequencies [3].

Original languageEnglish (US)
Title of host publication2010 IEEE International Solid-State Circuits Conference, ISSCC 2010 - Digest of Technical Papers
Pages150-151
Number of pages2
DOIs
StatePublished - May 18 2010
Event2010 IEEE International Solid-State Circuits Conference, ISSCC 2010 - San Francisco, CA, United States
Duration: Feb 7 2010Feb 11 2010

Publication series

NameDigest of Technical Papers - IEEE International Solid-State Circuits Conference
Volume53
ISSN (Print)0193-6530

Other

Other2010 IEEE International Solid-State Circuits Conference, ISSCC 2010
CountryUnited States
CitySan Francisco, CA
Period02/7/1002/11/10

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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