Defect free single crystal thin layer

Rami T. Elafandy (Inventor), Boon S. Ooi (Inventor)

Research output: Patent

Abstract

A gallium nitride film can be a dislocation free single crystal, which can be prepared by irradiating a surface of a substrate and contacting the surface with an etching solution that can selectively etch at dislocations.
Original languageEnglish (US)
Patent numberUS 20160027656 A1
StatePublished - Jan 28 2016

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