Deep level transient spectroscopy (DLTS) of a poly(p-phenylene vinylene) Schottky diode

A. J. Campbell, D. D.C. Bradley, E. Werner, W. Brütting

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Abstract

Deep level transient spectroscopy measurements have been carried out on ITO/poly(p-phenylenevinylene)/Al organic light emitting diodes that have a depletion region type Schottky barrier at the polymer/metal interface. The very long lived capacitance transients can be successfully described by the de-trapping of p-type majority carriers from a single energy trap level to a Gaussian distribution of transport states. The Gaussian width of 0.10 ± 0.02 eV and trap depth of 0.75 ± 0.05 eV are in excellent agreement with values measured from other unrelated experimental techniques.
Original languageEnglish (US)
JournalSynthetic Metals
Volume111
DOIs
StatePublished - Jun 1 2000
Externally publishedYes

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