Decoupling the Fermi-level pinning effect and intrinsic limitations on p-type effective work function metal electrodes

Huang Chun Wen*, Prashant Majhi, Kisik Choi, C. S. Park, Husam Niman Alshareef, H. Rusty Harris, Hongfa Luan, Hiro Niimi, Hong Bae Park, Gennadi Bersuker, Patrick S. Lysaght, Dim Lee Kwong, S. C. Song, Byoung Hun Lee, Raj Jammy

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

46 Scopus citations

Abstract

A review of literature combined with recent experimental results addressing the intrinsic and extrinsic factors controlling the effective work function (EWF) of metal gate electrodes on Hf-based high-K dielectrics is discussed. Through a systematic study including accurate extraction of EWF, our observations suggest, unlike popularly perceived, intrinsic Ef-pinning does not limit the EWF tuning on high-K. Also, a critical issue challenging the maintenance of high EWF metals at low effective oxide thicknesses (EOT), due to a new phenomena described as the "Vfb roll-off", is reported for the first time.

Original languageEnglish (US)
Pages (from-to)2-8
Number of pages7
JournalMicroelectronic Engineering
Volume85
Issue number1
DOIs
StatePublished - Jan 1 2008

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Fingerprint

Dive into the research topics of 'Decoupling the Fermi-level pinning effect and intrinsic limitations on p-type effective work function metal electrodes'. Together they form a unique fingerprint.

Cite this