Decoupling of CVD graphene by controlled oxidation of recrystallized Cu

Ang Yu Lu, Sung Yen Wei, Chih Yu Wu, Yenny Hernandez, Tzu Yin Chen, Te Huan Liu, Chun Wei Pao, Fu Rong Chen, Lain-Jong Li*, Zhen Yu Juang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

67 Scopus citations

Abstract

Large-area graphene grown by chemical vapour deposition (CVD) is promising for applications; however, the interaction between graphene and the substrate is still not well understood. In this report, we use a combination of two non-destructive characterization techniques, i.e., electron backscatter diffraction (EBSD) and Raman mapping to locally probe the interface between graphene and copper lattices without removing graphene. We conclude that the crystal structure of the Cu grains under graphene layers is governed by two competing processes: (1) graphene induced Cu surface reconstruction favoring the formation of Cu(100) orientation, and (2) recrystallization from bulk Cu favoring Cu(111) formation. The underlying Cu grains, regardless of reconstruction or recrystallization, induce a large hydrostatic compression to the graphene lattice. Interestingly, the strong interaction could be decoupled by allowing the intercalation of a thin cuprous oxide interfacial-layer. The Cu 2O layer is mechanically and chemically weak; hence, graphene films can be detached and transferred to arbitrary substrates and the Cu substrates could be re-used for graphene growth.

Original languageEnglish (US)
Pages (from-to)3008-3013
Number of pages6
JournalRSC Advances
Volume2
Issue number7
DOIs
StatePublished - Apr 7 2012

ASJC Scopus subject areas

  • Chemistry(all)
  • Chemical Engineering(all)

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