Damage-free substrate removal technique: Wet undercut etching of semipolar (20-21) laser structures by incorporation of un/relaxed sacrificial layer single quantum well

Arwa Saud Abbas, Ahmed Alyamani, Shuji Nakamura, Steven P. DenBaars

Research output: Contribution to journalArticlepeer-review

Abstract

We applied a damage-free substrate removal technique using photoelectrochemical etching (PECE) by incorporating sacrificial layer In0.12Ga0.88N single quantum well (SL-SQW) types in semipolar (202 ̅1) flip-chip laser diode (FC-LD) structures. Although 40-nm type I promoted the development of high-quality green active region (AR) devices in terms of managing strain relaxation, processing was required under low-temperature KOH. However, 10-nm type II exhibited a smooth n-type GaN surface with room-temperature KOH, thereby promoting the applicability of the proposed technique for either a short light emitter or a combination with type I. The temperature-dependent PECE of SL-SQW types is important in realizing advanced FC-LDs.
Original languageEnglish (US)
JournalJapanese Journal of Applied Physics
DOIs
StatePublished - Mar 30 2021
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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