CW operation of high-power blue laser diodes with polished facets on semi-polar ( 20 2 ¯ 1 ¯ ) GaN substrates

A. Pourhashemi, R.M. Farrell, D.A. Cohen, D.L. Becerra, S. P. DenBaars, S. Nakamura

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

Continuous wave (CW) operation of high-power blue laser diodes (LDs) with polished facets on semi-polar (202̅1̅) gallium nitride (GaN) substrates is demonstrated. Ridge waveguide LDs were fabricated using indium GaN waveguiding layers and GaN cladding layers. At a lasing wavelength of 452 nm, the peak two-facet CW output power from an LD with uncoated facets was 1.71 W at a current of 3 A, corresponding to an optical power density of 32.04 MW/cm2 on each facet. The dependence of output power on current did not change with repeated CW measurements, indicating that the polished facets did not degrade under high-power CW operation. These results show that polished facets are a viable alternative to cleaved or etched facets for high-power CW semi-polar LDs.
Original languageEnglish (US)
Pages (from-to)2003-2005
Number of pages3
JournalElectronics Letters
Volume52
Issue number24
DOIs
StatePublished - Oct 11 2016
Externally publishedYes

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