Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes

Hongping Zhao*, Guangyu Liu, Ronald A. Arif, Nelson Tansu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

199 Scopus citations

Abstract

Current injection efficiency and its impact on efficiency-droop in InGaN single quantum well (QW) based light-emitting diodes (LEDs) are investigated. The analysis is based on current continuity relation for drift and diffusion carrier transport across the QW-barrier system. A self-consistent 6-band k · p method is used to calculate the band structure for InGaN QW. The analysis indicates that the internal quantum efficiency in the conventional 24- In0.28Ga0.72N-GaN QW structure reaches its peak at low injection current density and reduces gradually with further increase in current due to the large carrier thermionic emission. Structures combining 24- In 0.28Ga0.72N QW with 15- Al0.1Ga0.9N barriers show slight reduction in quenching of the injection efficiency as current density increases. The use of 15- Al0.83In0.17N barriers shows significant reduction in efficiency-droop (10% reduction of the internal quantum efficiency at current density of 620 A/cm2). Thus, InGaN QWs employing thin layers of larger bandgap AlInN barriers suppress the efficiency-droop phenomenon significantly.

Original languageEnglish (US)
Pages (from-to)1119-1124
Number of pages6
JournalSolid-State Electronics
Volume54
Issue number10
DOIs
StatePublished - Oct 1 2010

Keywords

  • Efficiency-droop
  • III-Nitride
  • InGaN QWs
  • Light-emitting diodes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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