Current enhancement in crystalline silicon photovoltaic by low-cost nickel silicide back contact

R. R. Bahabry, A. Gumus, A. T. Kutbee, N. Wehbe, S. M. Ahmed, M. T. Ghoneim, K. -T. Lee, J. A. Rogers, M. M. Hussain

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report short circuit current (Jsc) enhancement in crystalline silicon (C-Si) photovoltaic (PV) using low-cost Ohmic contact engineering by integration of Nickel mono-silicide (NiSi) for back contact metallization as an alternative to the status quo of using expensive screen printed silver (Ag). We show 2.6 mA/cm2 enhancement in the short circuit current (Jsc) and 1.2 % increment in the efficiency by improving the current collection due to the low specific contact resistance of the NiSi on the heavily Boron (B) doped Silicon (Si) interface.
Original languageEnglish (US)
Title of host publication2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages602-605
Number of pages4
ISBN (Print)9781509027248
DOIs
StatePublished - Nov 30 2016

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