Curing quantum dots using inductively coupled argon plasma

T. Mei*, D. Nie, H. S. Djie, Boon Ooi

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The crystal quality of InGaAs/GaAs quantum dots (QDs) is substantially improved without redistribution of composition using inductively coupled Ar plasma exposure. An increase in photoluminescence intensity by 1.7 times is observed in the plasma-treated QDs with the peak wavelength unshifted. The bandgap blue-shift subject to the rapid thermal annealing is also suppressed, denoting improved thermal stability. The PL excitation-dependent experiment shows more prominent state-filling phenomenon in the plasma-treated QDs due to higher carrier density by defect density reduction.

Original languageEnglish (US)
Title of host publication2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings
Pages244-247
Number of pages4
StatePublished - Dec 8 2006
Event2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings - Boston, MA, United States
Duration: May 7 2006May 11 2006

Publication series

Name2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings
Volume1

Other

Other2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings
CountryUnited States
CityBoston, MA
Period05/7/0605/11/06

Keywords

  • Argon plasma
  • Intermixing
  • Photoluminescence
  • Quantum dot
  • Thermal annealing

ASJC Scopus subject areas

  • Engineering(all)

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