Cu-doped SiO2 induced atomic interdiffusion in semiconductor nano heterostructures

V. Hongpinyo*, Y. H. Ding, J. Anderson, H. S. Djie, Boon Ooi, R. R. Du, A. Ganjoo, H. Jain

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We investigate the influence of Cu impurity incorporation into the silica cap during the sputtering process on the enhancement of intermixing rate of semiconductor quantum nanostructures. Using the Cu:SiO2 process, we observed bandgap shift of over 200 meV from various GaAs-based quantum well (QW) heterostructures such as GaAs/AlGaAs, InAlGaP/GaAs, and GaAs/AlGaAs systems at significantly lower activation energy than the conventional impurity free vacancy disordering process (IFVD) using undoped SiO2 cap. The results suggest that the Cu:SiO2 process is a promising intermixing technique for the monolithic integration of multiple active/passive photonic components on GaAs-based material systems.

Original languageEnglish (US)
Title of host publicationSemiconductor Photonics
Subtitle of host publicationNano-Structured Materials and Devices
PublisherTrans Tech Publications
Pages33-35
Number of pages3
ISBN (Print)0878494715, 9780878494712
DOIs
StatePublished - Jan 1 2008
EventInternational Conference on Materials for Advanced Technologies, ICMAT 2007 - , Singapore
Duration: Jul 1 2007Jul 6 2007

Publication series

NameAdvanced Materials Research
Volume31
ISSN (Print)1022-6680

Other

OtherInternational Conference on Materials for Advanced Technologies, ICMAT 2007
CountrySingapore
Period07/1/0707/6/07

Keywords

  • Impurity diffusion
  • Impurity free vacancy induced disordering
  • Photonic integrated circuits
  • Quantum well
  • Quantum well intermixing

ASJC Scopus subject areas

  • Engineering(all)

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