Crystallization and silicon diffusion nanoscale effects on the electrical properties of Al2O3 based devices

M. Lanza, M. Porti, M. Nafria, X. Aymerich, G. Benstetter, E. Lodermeier, H. Ranzinger, G. Jaschke, S. Teichert, L. Wilde, P. Michalowski

Research output: Contribution to journalArticlepeer-review

26 Scopus citations

Abstract

In this work, Atomic Force Microscopy (AFM) based techniques are used to study, at the nanoscale, the dependence of the electrical properties of Al2O3 stacks for Flash memories on the percent of diffused Silicon and material crystallization after being annealed at different temperatures. © 2009 Elsevier B.V. All rights reserved.
Original languageEnglish (US)
Pages (from-to)1921-1924
Number of pages4
JournalMicroelectronic Engineering
Volume86
Issue number7-9
DOIs
StatePublished - Jul 1 2009
Externally publishedYes

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Atomic and Molecular Physics, and Optics
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering
  • Condensed Matter Physics

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