Crystal growth and equilibrium crystal shapes of silicon in the melt

Xinbo Yang*, K. Fujiwara, K. Maeda, J. Nozawa, H. Koizumi, S. Uda

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

The crystal growth shape (CGS) and equilibrium crystal shape (ECS) of silicon in Si melt are observed using in situ observation. Fully faceted silicon CGSs, which are dominated by the {111} facets, are observed from the {112} and {110} orientation. Silicon CGS in three-dimensional in Si melt is octahedral in shape, bounded by {111} facets. Silicon ECSs in the melt are obtained by the relaxation from the CGSs and exhibit the {111} facets separated by curved interface.

Original languageEnglish (US)
Pages (from-to)574-580
Number of pages7
JournalProgress in Photovoltaics: Research and Applications
Volume22
Issue number5
DOIs
StatePublished - May 1 2014

Keywords

  • crystal growth shape
  • equilibrium crystal shape
  • silicon

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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