Critical Temperature for the Conversion from Wurtzite to Zincblende of the Optical Emission of InAs Nanowires

Michele B. Rota, Amira S. Ameruddin, Jennifer Wong-Leung, Abderrezak Belabbes, Qiang Gao, Antonio Miriametro, Francesco Mura, Hark Hoe Tan, Antonio Polimeni, Friedhelm Bechstedt, Chennupati Jagadish, Mario Capizzi

Research output: Contribution to journalArticlepeer-review

Abstract

One hour annealing at 300 degrees C changes the optical emission characteristics of InAs nanowires (NWs) from the wurtzite (WZ) phase into that of zincblende (ZB). These results are accounted for by the conversion of a small fraction of the NW WZ metastable structure into the stable ZB structure. Several paths toward the polytype transformation in the configuration space are also demonstrated using first-principles calculations. For lower annealing temperatures, emission which is likely related to WZ polytypes is observed at energies that agree with theoretical predictions. These results demonstrate severe constraints on thermal processes to which devices made from InAs WZ NWs can be exposed.
Original languageEnglish (US)
Pages (from-to)16650-16656
Number of pages7
JournalThe Journal of Physical Chemistry C
Volume121
Issue number30
DOIs
StatePublished - Jul 21 2017

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