Critical discussion on (100) and (110) orientation dependent transport: nMOS planar and FinFET

C. D. Young*, M. O. Baykan, A. Agrawal, H. Madan, K. Akarvardar, C. Hobbs, I. Ok, W. Taylor, C. E. Smith, Muhammad Mustafa Hussain, T. Nishida, S. Thompson, P. Majhi, P. Kirsch, S. Datta, R. Jammy

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

17 Scopus citations

Abstract

Electron mobility on (100) and (110) planar FETs and SOI FinFETs was evaluated. It is experimentally demonstrated that the (110) sidewall of FinFETs does not present a drawback in terms of electron mobility - contrary to results obtained on (110) planar MOSFETs. This is comprehensively explained by a combination of first principles and empirical approach closely matching the experimental data.

Original languageEnglish (US)
Title of host publication2011 Symposium on VLSI Technology, VLSIT 2011 - Digest of Technical Papers
Pages18-19
Number of pages2
StatePublished - Sep 16 2011
Event2011 Symposium on VLSI Technology, VLSIT 2011 - Kyoto, Japan
Duration: Jun 14 2011Jun 16 2011

Publication series

NameDigest of Technical Papers - Symposium on VLSI Technology
ISSN (Print)0743-1562

Other

Other2011 Symposium on VLSI Technology, VLSIT 2011
CountryJapan
CityKyoto
Period06/14/1106/16/11

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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