Cr-doped III-V nitrides: Potential candidates for spintronics

Bin Amin, Suneela K. Arif, Iftikhar Ahmad, Muhammad Maqbool, Roshan Ahmad, Souraya Goumri-Said, Keith A. Prisbrey

Research output: Contribution to journalArticlepeer-review

34 Scopus citations

Abstract

Studies of Cr-doped III-V nitrides, dilute magnetic alloys in the zincblende crystal structure, are presented. The objective of the work is to investigate half-metallicity in Al 0.75Cr 0.25N, Ga 0.75Cr 0.25N, and In 0.75Cr 0.25N for their possible application in spin-based electronic devices. The calculated spin-polarized band structures, electronic properties, and magnetic properties of these compounds reveal that Al 0.75Cr 0.25N and Ga 0.75Cr 0.25N are half-metallic dilute magnetic semiconductors while In 0.75Cr 0.25N is metallic in nature. The present theoretical predictions provide evidence that some Cr-doped III-V nitrides can be used in spintronics devices. © 2011 TMS.
Original languageEnglish (US)
Pages (from-to)1428-1436
Number of pages9
JournalJournal of Electronic Materials
Volume40
Issue number6
DOIs
StatePublished - Feb 19 2011

ASJC Scopus subject areas

  • Materials Chemistry
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering
  • Condensed Matter Physics

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