Correlation of Dielectric Breakdown and Nanoscale Adhesion in Silicon Dioxide Thin Films

A. Ranjan, S. J. O'Shea, M. Bosman, J. Molina, N. Raghavan, K. L. Pey

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

In this work, we introduce a new method that correlates changes in the adhesion and the electrical stress induced defects at the nanometer length scale in dielectric thin films using a conductive atomic force microscope (CAFM). Taking a simple case of silicon dioxide (SiO2), we demonstrate that adhesion at the CAFM tip-oxide contact increases after electrical stress. We also present evidence showing that the polarity dependence of the post-breakdown adhesion is primarily due to the interplay of the CAFM tip with the chemical/ionic bonding and with the electrostatically-charged stress-induced defects (i.e., oxygen ions and vacancies). This new approach can be potentially used to infer the trapped charge densities at the nanometer length scales in dielectrics.
Original languageEnglish (US)
Title of host publication2020 IEEE International Reliability Physics Symposium (IRPS)
PublisherIEEE
ISBN (Print)9781728131993
DOIs
StatePublished - Apr 2020
Externally publishedYes

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