Core Fluorination Enhances Solubility and Ambient Stability of an IDT-Based n-Type Semiconductor in Transistor Devices

Thomas Hodsden, Karl J. Thorley, Julianna Panidi, Aniruddha Basu, Adam V. Marsh, Haojie Dai, Andrew J. P. White, Changsheng Wang, William Mitchell, Florian Glöcklhofer, Thomas D. Anthopoulos, Martin Heeney

Research output: Contribution to journalArticlepeer-review

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Abstract

The synthesis of a novel fluorinated n-type small molecule based on an inda-cenodithiophene core is reported. Fluorination is found to have a significant impact on the physical properties, including a surprisingly dramatic improve-ment in solubility, in addition to effectively stabilizing the lowest-unoccupied molecular orbital energy (−4.24 eV). Single-crystal analysis and density func-tional theory calculations indicate the improved solubility can be attributed to backbone torsion resulting from the positioning of the fluorine group in close proximity to the strongly electron-withdrawing dicyanomethylene group. Organic thin-film transistors made via blade coating display high electron mobility (up to 0.49 cm2 V−1 s−1) along with good retention of performance in ambient conditions.
Original languageEnglish (US)
Pages (from-to)2000325
JournalAdvanced Functional Materials
DOIs
StatePublished - Feb 26 2020

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